Molecular 2D/Polymer-based Memristors
Our previous ERC project showed that 2D materials, when combined with molecular components, can be chemically tuned to unlock entirely new physical properties. This molecular/2D synergy enabled unprecedented control over electronic states and interactions, opening the door to transformative device concepts. Building on these breakthroughs, we now propose a new generation of hybrid memristors. By embedding ionic species within molecular polymers containing 2D materials such as MoS2, WS2, and MoSSe, we achieve volatile, analog memristive behavior with ultra-low energy consumption and full CMOS compatibility. These devices operate adaptively, mimicking short-term synaptic responses—something oxide-based memristors cannot deliver—and provide the foundation for real-time tasks such as vision, speech recognition, and neuromorphic signal processing. Volatile memristors offer a direct solution to the von Neumann bottleneck by merging memory and computation at the sensor edge. Instead of wasting energy shuttling data back and forth, information is processed where it is generated. This drastically reduces latency and power consumption while enabling compact, scalable architectures capable of pre-processing massive data streams for AI tasks in real time. This Proof of Concept will advance our patented demonstrator from TRL3 to TRL5. We will fabricate nanoscale, CMOS-compatible devices, integrate them into programmable preprocessing modules, and validate them with industrial partners. The project carries significant risk, requiring new fabrication strategies, system-level integration, and novel architectures. However, the potential reward is substantial: successful outcomes would open the way to using 2D hybrid memristors in applications beyond the reach of conventional inorganic compounds.
4/6 complete
Imported from OpenAIRE Spain | Grant 101287828.
Open sourceOverview
Grant agreement 101287828 | Mol-2DMem
Open sourceOur previous ERC project showed that 2D materials, when combined with molecular components, can be chemically tuned to unlock entirely new physical properties. This molecular/2D synergy enabled unprecedented control over electronic states and interactions, opening the door to transformative device concepts. Building on these breakthroughs, we now propose a new generation of hybrid memristors. By embedding ionic species within molecular polymers containing 2D materials such as MoS2, WS2, and MoSSe, we achieve volatile, analog memristive behavior with ultra-low energy consumption and full CMOS compatibility. These devices operate adaptively, mimicking short-term synaptic responses—something oxide-based memristors cannot deliver—and provide the foundation for real-time tasks such as vision, speech recognition, and neuromorphic signal processing. Volatile memristors offer a direct solution to the von Neumann bottleneck by merging memory and computation at the sensor edge. Instead of wasting energy shuttling data back and forth, information is processed where it is generated. This drastically reduces latency and power consumption while enabling compact, scalable architectures capable of pre-processing massive data streams for AI tasks in real time. This Proof of Concept will advance our patented demonstrator from TRL3 to TRL5. We will fabricate nanoscale, CMOS-compatible devices, integrate them into programmable preprocessing modules, and validate them with industrial partners. The project carries significant risk, requiring new fabrication strategies, system-level integration, and novel architectures. However, the potential reward is substantial: successful outcomes would open the way to using 2D hybrid memristors in applications beyond the reach of conventional inorganic compounds.